Datasheet > 2SD879(SOT-89)

2SD879(SOT-89)

更新时间： 2024-01-22 02:59:41

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	90K
描述
Transistor

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技术参数
数据手册

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2SD879(SOT-89) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
最大集电极电流 (IC)：	3 A	配置：	Single
最小直流电流增益 (hFE)：	140	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SD879(SOT-89) 数据手册

UTC2SD879

NPNEPITAXIAL SILICON TRANSISTOR

1.5V, 3V STROBE APPLICATIONS

DESCRIPTION

The UTC 2SD879 is a NPN epitaxial silicon transistor,

designed for 1.5V and 3V strobe applications.

FEATURES

*In applications where two NiCd batteries are used to

provide 2.4V, two 2SD879s are used.

*The charge time is approximately 1 second faster than

that of germanium transistors.

*Less power dissipation because of lwo

Collector-to-Emitter Voltage V_CE(sat), permitting more

flashes of light to be emitted.

SOT-89

*Large current capacity and highly resistant to break-down.

*Excellent linearity of hFE in the region from low current to

high current.

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ^{( Ta=25°C ,unless otherwise specified )}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEX

VCEO

VEBO

P_D

VALUE

UNIT

°C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation

Collector Current(DC)

Collector Current(PULSE)

Junction Temperature

Storage Temperature

Icp

TSTG

150

-55 ~ +150

Note: PULSE CONDITION -> 100 ms single pulse

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

SYMBOL

VCBO

VCEX

VCEO

VEBO

VBE

TEST CONDITIONS

IC=10uA, IE=0

MIN TYP MAX UNIT

µA

IC=1mA, VBE=3V

IC=1mA, R_BE=∞

IE=10uA, IC=0

VCE=-1V,IC=-2A

VCB=20V,IE=0

Base-Emitter Voltage

0.83

1.5

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

ICBO

IEBO

hFE

VCE(sat)

VEB=4V,Ic=0

VCE=2V, Ic=3A (pulse)

Ic=3A,IB=60mA (pulse)

VCE=10V, Ic=50mA

VCB=10V,f=1MHz

140

210

0.3

200

400

0.4

MHz

Cob

Pulse: 1mS

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R208-010,A

12 3

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