UTC2SD879
NPNEPITAXIAL SILICON TRANSISTOR
1.5V, 3V STROBE APPLICATIONS
DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor,
designed for 1.5V and 3V strobe applications.
FEATURES
*In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
*The charge time is approximately 1 second faster than
that of germanium transistors.
1
*Less power dissipation because of lwo
Collector-to-Emitter Voltage VCE(sat), permitting more
flashes of light to be emitted.
TO-92
*Large current capacity and highly resistant to break-down.
*Excellent linearity of hFE in the region from low current to
high current.
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEX
VCEO
VEBO
PD
VALUE
UNIT
V
V
V
V
W
A
A
°C
°C
30
20
10
6
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
1
Collector Current(DC)
Collector Current(PULSE)
Junction Temperature
Storage Temperature
Ic
Icp
Tj
TSTG
3
5
150
-55 ~ +150
Note: PULSE CONDITION -> 100 ms single pulse
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEX
VCEO
VEBO
VBE
TEST CONDITIONS
IC=10uA, IE=0
MIN TYP MAX UNIT
30
20
10
6
V
V
V
V
V
µA
µA
IC=1mA, VBE=3V
IC=1mA, RBE=∞
IE=10uA, IC=0
VCE=-1V,IC=-2A
VCB=20V,IE=0
Base-Emitter Voltage
0.83
1.5
1
1
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
VCE(sat)
fT
VEB=4V,Ic=0
VCE=2V, Ic=3A (pulse)
Ic=3A,IB=60mA (pulse)
VCE=10V, Ic=50mA
VCB=10V,f=1MHz
140
210
0.3
200
30
400
0.4
V
MHz
pF
Cob
Pulse: 1mS
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R201-043,A