Datasheet > 2SD880B

2SD880B

更新时间： 2024-11-19 17:01:15

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	421K
描述
60V,3A,General Purpose PNP Bipolar Transistor

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中文翻译

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数据手册

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2SD880B 数据手册

NPN Silicon Epitaxial Planar Transistor

2SD880B

Features



Epitaxial planar die construction

Complementary to 2SB834B

Mechanic al Data



Case: TO-263

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

2SD880B

50 pcs / Tube or 800 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

Unit

Junction Temperature

T_J

-55 ~ +150

°C

Storage Temperature Range

T_STG

°C

STM0477A: November 2020

www.gmesemi.com

12 3 4

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与2SD880B相关器件

型号	品牌	获取价格	描述	数据表
2SD880-BP	MCC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD880G-AB3-R	UTC	获取价格	NPN EPITAXIAL TRANSISTOR
2SD880GR	TOSHIBA	获取价格	TRANSISTOR 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power
2SD880GR	TRSYS	获取价格	Transistor
2SD880GR	CDIL	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD880-GR	MCC	获取价格	NPN Silicon Power Transistors
2SD880GR(TO-220)	CJ	获取价格	Transistor
2SD880-GR-BP	MCC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD880-GR-BP-HF	MCC	获取价格	Power Bipolar Transistor,
2SD880GRL	TRSYS	获取价格	暂无描述