Datasheet > 2SD879

2SD879

更新时间： 2024-11-10 14:54:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	427K
描述
TO-92

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中文翻译

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数据手册

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2SD879 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SD879

TRANSISTOR (NPN)

TO-92

FEATURES

1. EMITTER

^zIn Applications Where Two NiCd Batteries are Used to rovide

2.4V, two 2SD879s are used.

^zThe charge time is appro ximately 1 second faster Than that of

germanium transistors.

2. COLLECTOR

3. BASE

^zLess power dissip ation because o f low Collector-to-Emitter

Voltage V_CE(sat), permitting more flashes of light to be emitted.

^zSmall package and large allowable collector dissipation (TO-92,

P_C=750mW).

^zLarge current capacity and highly resistant to break-down.

^zExcellent linearity of h_FEin the region from low current to high

current. Power amplifier applications

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ORDERING INFORMATIONꢀ

Part Number

Package

TO-92

Packing Method

Pack Quantity

1000pcs/Bag

2000pcs/Box

Bulk

ꢁSD879

TO-92

Tape

ꢁSD879ꢂꢃꢄ

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_CEX

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

750

P_C

℃

Operation Junction and Storage Temperature Range

-55~+150

T_J,T_stg

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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