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2SD875-R PDF预览

2SD875-R

更新时间: 2024-11-06 01:14:11
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科信 - KEXIN /
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2页 922K
描述
NPN Transistors

2SD875-R 数据手册

 浏览型号2SD875-R的Datasheet PDF文件第2页 
SMD Type  
Transistors  
NPN Transistors  
2SD875  
1.70 0.1  
Features  
Large collector power dissipation PC.  
High collector to emitter voltage VCEO  
Complimentary to 2SB767  
.
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
80  
80  
5
Collector Current - Continuous  
Collector Current - Pulse  
Collector Power Dissipation  
Junction Temperature  
I
C
0.5  
A
I
CP  
1
1
P
C
W
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
80  
80  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100 μAI  
Ic= 1 mAI = 0  
= 100μAI = 0  
CB= 60V , I = 0  
EB= 4V , I =0  
E= 0  
B
I
E
C
I
CBO  
EBO  
V
V
E
100  
100  
0.4  
nA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=300 mA, I  
B
=30mA  
=30mA  
0.2  
V
C
=300 mA, I  
B
0.85  
1.2  
h
FE(1)  
V
V
V
V
CE= 10V, I  
C
= 150mA  
130  
50  
330  
DC current gain  
hFE(2)  
CE= 5V, I = 500mA  
C
100  
11  
Collector output capacitance  
Transition frequency  
C
ob  
CB= 10V, I  
CE= 10V, I  
E
= 0,f=1MHz  
= -50mA,f=200MHz  
pF  
f
T
E
120  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
2SD875-R  
130-220  
XR  
2SD875-S  
185-330  
XS  
1
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