Datasheet > 2SD875-R-HF

2SD875-R-HF

更新时间： 2024-01-17 11:13:53

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1001K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD875-R-HF 数据手册

SMD Type

Transistors

NPN Transistors

2SD875-HF

1.70 0.1

■ Features

● Large collector power dissipation PC.

● High collector to emitter voltage V^CEO

● Complimentary to 2SB767-HF

0.42 0.1

0.46 0.1

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

0.5

℃

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I = 0

CB= 60V , I = 0

EB= 4V , I =0

E= 0

CBO

EBO

100

0.4

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=300 mA, I

=30mA

0.2

=300 mA, I

0.85

1.2

FE(1)

CE= 10V, I

= 150mA

130

330

DC current gain

hFE(2)

CE= 5V, I = 500mA

100

Collector output capacitance

Transition frequency

CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= -50mA,f=200MHz

120

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD875-R-HF

130-220

2SD875-S-HF

185-330

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