生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.72 |
Is Samacsys: | N | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 290 MHz | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2164TV6/R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD2165 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIER | |
2SD2165-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SD2165-AZ | RENESAS |
获取价格 |
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SD2165K | ETC |
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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-220VAR | |
2SD2165-K | RENESAS |
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6A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3 | |
2SD2165-K-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SD2165-K-AZ | RENESAS |
获取价格 |
6A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3 | |
2SD2165L | ETC |
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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-220VAR | |
2SD2165-L | NEC |
获取价格 |
6A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3 |