生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.22 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 800 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 110 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2166 | ROHM |
获取价格 |
Low VCE(sat) Transistor(Strobe flash) | |
2SD2166 | FOSHAN |
获取价格 |
TO-126F | |
2SD2166/Q | ROHM |
获取价格 |
5A, 20V, NPN, Si, POWER TRANSISTOR, TO-126FP, TO-126FP, 3 PIN | |
2SD2166/QR | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
2SD2166/QS | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
2SD2166/R | ROHM |
获取价格 |
5A, 20V, NPN, Si, POWER TRANSISTOR, TO-126FP, TO-126FP, 3 PIN | |
2SD2166Q | ROHM |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2166R | ROHM |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2166S | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2167 | KEXIN |
获取价格 |
Power Transistor |