是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.77 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 10 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2166R | ROHM |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2166S | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2167 | KEXIN |
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Power Transistor | |
2SD2167 | TYSEMI |
获取价格 |
Built-in zener diode between collector and base. Zener diode has low voltage dispersion. | |
2SD2167 | ROHM |
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Power Transistor | |
2SD2167N | ETC |
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TRANSISTOR | BJT | NPN | 31V V(BR)CEO | 2A I(C) | SC-62 | |
2SD2167P | ETC |
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TRANSISTOR | BJT | NPN | 31V V(BR)CEO | 2A I(C) | SC-62 | |
2SD2167Q | ETC |
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TRANSISTOR | BJT | NPN | 31V V(BR)CEO | 2A I(C) | SC-62 | |
2SD2167T100 | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2167T100/NP | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 27V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |