Datasheet > 2SD2167T100/Q

2SD2167T100/Q

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
1页	54K
描述
Si, SMALL SIGNAL TRANSISTOR

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2SD2167T100/Q 数据手册

2SD2167

Transistors

Power Transistor (31 4V, 2A)

2SD2167

!Features

!External dimensions (Units : mm)

1) Built-in zener diode between collector and base.

2) Zener diode has low voltage dispersion.

3) Strong protection against reverse power surges due

to low loads.

4.0

2.5

1.0

0.5

(

)

(

)

(

)

4) P^C=2 W (on 40×40×0.7mm ceramic board)

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

!Absolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

31 4

A(DC)

A(Pulse)

Collector current

∗

0.5

Collector power dissipation

Junction temperature

Storage temperature

150

°C

Tstg

−55 ∼ +150

∗

Pw=20ms , duty=1 / 2

When mounted on a 40 × 40 × 0.7 mm ceramic board.

!Packaging specifications and h^FE

Type

2SD2167

MPT3

Package

hFE

NPQ

Marking

Code

Basic ordering unit (pieces)

∗

T100

1000

∗Denotes hFE

!Electrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

−

0.25

−

100

−

= 50µA

= 1mA

= 50µA

CB = 20V

EB = 5V

CBO

−

µA

Emitter cutoff current

EBO

∗

= 2A/0.2A

Collector-emitter saturation voltage

VCE(sat)

0.5

270

−

= 1A/50mA

DC current transfer ratio

Transition frequency

Output capacitance

hFE

−

MHz

CE/I

CE = 3V , I

CB = 10V , I

= 3V/0.5A

= −0.5A , f= 30MHz

= 0A , f = 1MHz

∗

Cob

−

∗

Measured using pulse current.

1/1

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