Datasheet > 2SD2167

2SD2167

更新时间： 2024-10-02 06:24:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
2页	53K
描述
Power Transistor

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中文翻译

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数据手册

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2SD2167 数据手册

SMD Type

Transistors

Power Transistor

2SD2167

Features

Built-in zener diode between collector and base.

Zener diode has low voltage dispersion.

Strong protection against reverse power surges due

to low loads.

PC=2 W (on 40 40 0.7mm ceramic board) .

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

Rating

Unit

V^CEO

V^EBO

DC)

Collector current

I^C

A(Pulse)*1

0.5

Collector power dissipation

W *2

Junction temperature

Storage temperature

150

Tstg

-55 to +150

*1 Pw=20ms , duty=1/2

*2 When mounted on a 40 x 40 x 0.7 mm ceramic board.

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与2SD2167相关器件

型号	品牌	获取价格	描述	数据表
2SD2167N	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 31V V(BR)CEO \| 2A I(C) \| SC-62
2SD2167P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 31V V(BR)CEO \| 2A I(C) \| SC-62
2SD2167Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 31V V(BR)CEO \| 2A I(C) \| SC-62
2SD2167T100	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon,
2SD2167T100/NP	ROHM	获取价格	Power Bipolar Transistor, 2A I(C), 27V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2167T100/NQ	ROHM	获取价格	Power Bipolar Transistor, 2A I(C), 27V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2167T100/P	ROHM	获取价格	Si, SMALL SIGNAL TRANSISTOR
2SD2167T100/PQ	ROHM	获取价格	Power Bipolar Transistor, 2A I(C), 27V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2167T100/Q	ROHM	获取价格	Si, SMALL SIGNAL TRANSISTOR
2SD2167T100N	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 31V V(BR)CEO \| 2A I(C) \| SOT-89