生命周期: | Obsolete | 零件包装代码: | SIP |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.77 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2166/QR | ROHM |
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Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
2SD2166/QS | ROHM |
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Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
2SD2166/R | ROHM |
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5A, 20V, NPN, Si, POWER TRANSISTOR, TO-126FP, TO-126FP, 3 PIN | |
2SD2166Q | ROHM |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2166R | ROHM |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2166S | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-126 | |
2SD2167 | KEXIN |
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Power Transistor | |
2SD2167 | TYSEMI |
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Built-in zener diode between collector and base. Zener diode has low voltage dispersion. | |
2SD2167 | ROHM |
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Power Transistor | |
2SD2167N | ETC |
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TRANSISTOR | BJT | NPN | 31V V(BR)CEO | 2A I(C) | SC-62 |