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2SD2165

更新时间： 2024-10-01 22:52:47
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日电电子 - NEC 晶体开关放大器晶体管功率双极晶体管功率放大器局域网
页数 文件大小 规格书
5页 118K
描述
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

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中文翻译

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2SD2165 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.74
外壳连接：ISOLATED最大集电极电流 (IC)：6 A
集电极-发射极最大电压：100 V配置：SINGLE
最小直流电流增益 (hFE)：500JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：110 MHzBase Number Matches：1

2SD2165 数据手册

 浏览型号2SD2165的Datasheet PDF文件第2页浏览型号2SD2165的Datasheet PDF文件第3页浏览型号2SD2165的Datasheet PDF文件第4页浏览型号2SD2165的Datasheet PDF文件第5页 
DATA SHEET  
SILICON POWER TRANSISTOR  
2SD2165  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SD2165 is a single power transistor developed especially  
for high hFE. This transistor is ideal for simplifying drive circuits and  
reducing power dissipation because its hFE is as high as that of  
Darlington transistors, but it is a single transistor.  
4.5 0.2  
10.0 0.3  
φ
3.2 0.2  
2.7 0.2  
In addition, this transistor features  
a small resin-molded  
insulation package, thus contributing to high-density mounting and  
mounting cost reduction.  
FEATURES  
• High hFE and low VCE(sat):  
hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)  
VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)  
• Mold package that does not require an insulating board or  
insulation bushing  
2.5 0.1  
0.65 0.1  
0.7 0.1  
1.3 0.2  
1.5 0.2  
2.54 TYP.  
2.54 TYP.  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Electrode Connection  
1. Base  
2. Collector  
3. Emitter  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)  
IB(DC)  
PT  
Ratings  
100  
Unit  
V
1
2 3  
100  
V
7.0  
V
6.0  
A
Collector current (pulse)  
Base current (DC)  
10Note  
A
1.0  
A
Total power dissipation (TC = 25°C)  
Total power dissipation (TA = 25°C)  
Junction temperature  
30  
W
W
°C  
°C  
PT  
2.0  
Tj  
150  
Storage temperature  
Tstg  
−55 to +150  
Note PW ≤ 300 µs, duty cycle ≤ 10%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D13178EJ3V0DS00 (3rd edition)  
The mark shows major revised points.  
Date Published March 2004 N CP(K)  
Printed in Japan  
c
2002  
12345

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2SD2165 替代型号

型号 品牌 替代类型 描述 数据表
2SD2165-AZ RENESAS

功能相似

 Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

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 		Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2165-AZ RENESAS

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 		Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2165K ETC

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 		TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-220VAR
2SD2165-K RENESAS

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 		6A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2165-K-AZ NEC

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 		Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2165-K-AZ RENESAS

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 		6A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2165L ETC

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 		TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-220VAR
2SD2165-L NEC

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 		6A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2165-L RENESAS

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 		6A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2165-L-AZ NEC

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