Datasheet > 2SD2165M

2SD2165M

更新时间： 2024-10-01 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关局域网
页数	文件大小	规格书
6页	115K
描述
TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-220VAR

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中文翻译

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数据手册

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2SD2165M 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SD2165

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SD2165 is a single power transistor developed especially

for high h^FE. This transistor is ideal for simplifying drive circuits and

reducing power dissipation because its h^FEis as high as that of

Darlington transistors, but it is a single transistor.

In addition, this transistor features

a small resin-molded

insulation package, thus contributing to high-density mounting and

mounting cost reduction.

FEATURES

• High h^FEand low V^CE(sat):

h^FE≅ 1,300 TYP. (V^CE= 5.0 V, I^C= 1.0 A)

V^CE(SAT)≅ 0.3 V TYP. (I^C= 3.0 A, I^B= 30 mA)

• Mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Electrode Connection

1. Base

Parameter

Symbol

V^CBO

Ratings

100

Unit

2. Collector

3. Emitter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

V^CEO

100

V^EBO

7.0

I^C(DC)

6.0

I^C(pulse)

10^Note

I^B(DC)

1.0

P^T(T^C= 25°C)

P^T(T^A= 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

Note PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D13178EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SD2165M相关器件

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2SD2165-M	RENESAS	获取价格	6A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2165-M-AZ	NEC	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2165-M-AZ	RENESAS	获取价格	6A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
2SD2166	ROHM	获取价格	Low VCE(sat) Transistor(Strobe flash)
2SD2166	FOSHAN	获取价格	TO-126F
2SD2166/Q	ROHM	获取价格	5A, 20V, NPN, Si, POWER TRANSISTOR, TO-126FP, TO-126FP, 3 PIN
2SD2166/QR	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD2166/QS	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD2166/R	ROHM	获取价格	5A, 20V, NPN, Si, POWER TRANSISTOR, TO-126FP, TO-126FP, 3 PIN
2SD2166Q	ROHM	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 10A I(C) \| TO-126