Datasheet > 2SD2150_09

2SD2150_09

更新时间： 2024-11-20 07:31:43

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	311K
描述
NPN Plastic Encapsulated Transistor

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2SD2150_09 数据手册

2SD2150

3 A, 40 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-89

FEATURES

ꢀExcellent Current-to-Gain Characteristics

ꢀLow Collector Saturation Voltage,

ꢀV_CE(SAT)=0.5V(Max.) for I_C/ I_B=2A/0.1A

Collector

Base

Emitter

Millimeter

REF.

Min.

Max.

4.60

4.25

1.60

2.60

Min.

Max.

MARKING

4.40

3.94

1.40

2.30

0.40

0.58

1.50 TYP

3.00 TYP

CFR

CFS

0.32

0.35

0.52

0.44

1.50

0.89

1.70

1.20

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Power Dissipation

Junction & Storage Temperature

P_C

500

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=50µA, I_E=0

I_C=1mA, I_B=0

I_E=50µA, I_C=0

V_CB=30V, I_E=0

V_EB=5 V, I_C=0

V_CE=2V, I_C= 100mA

I_C=2A, I_B= 100mA

0.1

560

0.5

µA

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

I_EBO

h_FE

180

V_CE(sat)

f_T*

290

MHz V_CE=2V, I_C=-500mA, f=100MHz

Collector Output Capacitance

C_OB

V_CB=10V, I_E=0, f=1MHz

*Pulse test: t_P≦300µS, δ≦0.02

CLASSIFICATION OF hFE

Rank

Range

Marking

180-390

CFR

270-560

CFS

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

6-Nov-2009 Rev. B

Page 1 of 2

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