Datasheet > 2SD2150_15

2SD2150_15

更新时间： 2024-12-01 01:14:15

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD2150_15 数据手册

SMD Type

Transistors

NPN Transistors

2SD2150

1.70 0.1

■ Features

● Excellent current-to-gain characteristics

● Low collector saturation voltage V^CE(sat)

● Complementary to 2SB1412

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

500

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100uA， I

Ic= 1 mA， I = 0

= 100u A， I

^CB= 35 V , I

EB= 5V , I

E= 0

C= 0

CBO

EBO

E= 0

0.1

0.5

1.2

560

C=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=2 A, I

=100mA

=2 A, I

hFE

^CE= 2V, I

CB=10V, I

CE=2V,I =500mA,f=100MHz

C= 100mA

180

Collector output capacitance

Transition frequency

E=0, f=1MHz

290

MHz

■ Classification of hfe

Type

Range

Marking

2SD2150-R

180-390

CF R*

2SD2150-S

270-560

CF S*

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