Datasheet > 2SD2150-SOT-89

2SD2150-SOT-89

更新时间： 2024-09-15 07:31:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
1页	24K
描述
TRANSISTOR NPN)

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中文翻译

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数据手册

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2SD2150-SOT-89 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89 Plastic-Encapsulate Transistors

SOT-89

2SD2150 TRANSISTOR NPN

1.BASE

FEATURES

Power dissipation

2.COLLECTOR

3.EMITTER

P_CM

Collector current

I_CM

: 0.5

: 3

W Tamb=25

Collector-base voltage

_(BR)CBO: 40

Operating and storage junction temperature range

T_JT_stg: -55 to +150

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=50 A,I_E=0

Ic=1mA,I_B=0

I_E=50 A,I_C=0

V_CB=30V,I_E=0

0.1

560

0.5

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE(1)

V_CE=2V,I_C=0.1A

I_C=2A,I_B=100mA

V_CE=2V,I_C=0.5A ,f=100MHz

V_CB=10V,I_E=0,f=1MHz

180

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

MHz

f_T

290

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

120-270

CFQ

180-390

CFR

270-560

CFS

Range

Marking

中文翻译

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