是否Rohs认证: | 不符合 | 生命周期: | Lifetime Buy |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.44 |
Is Samacsys: | N | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 50 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 1000 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
功耗环境最大值: | 10 W | 最大功率耗散 (Abs): | 1.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 60 MHz | VCEsat-Max: | 1.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2131 | TOSHIBA |
获取价格 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIO | |
2SD2131_06 | TOSHIBA |
获取价格 |
Silicon NPN Triple Diffused Type (Darlington) | |
2SD2132 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD2132/UV | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD2132/UW | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD2132/V | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD2132/VW | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD2132/W | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD2132T93 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD2132T93/U | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |