2SD2136

更新时间： 2024-11-12 04:26:15

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
3页	115K
描述
POWER TRANSISTOR

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中文翻译

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数据手册

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2SD2136 数据手册

UTC2SD2136

NPN EPITAXIAL SILICON TRANSISTOR

POWER TRANSISTOR

DESCRIPTION

The UTC 2SD2136 is designed for power amplification

FEATURES

*High forward current transfer ratio hFE which has

satisfactory linearity.

*Low collector to emitter saturation voltage V_CE(sat)

*Allowing supply with the radial taping.

TO-126

1: BASE 2:COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS _{( Ta=25°C )}

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Peak Collector Current

Collector Dssipation

Junction Temperature

Storage Temperature

Icp

Tstg

1.5

150

°C

-55 ~ +150

ELECTRICAL CHARACTERISTICS _{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector-Emitter Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Transfer Ratio

SYMBOL

V_CEO

ICEO

TEST CONDITIONS

Ic=30mA ,IB=0

MIN TYP MAX UNIT

VCE=60V,IB=0

VCE=60V,V_BE=0

VEB=6V,Ic=0

300

200

µA

ICES

IEBO

hFE1*

VCE=4V,Ic=1A

VCE=4V,Ic=3A

250

hFE2

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Fall time

Turn on time

Storage Time

VCE(sat) Ic=3A,IB=0.375A

1.2

1.8

MHz

µS

V_BE

VCE=4V,Ic=3A

VCE=5V,I_E= -0.1A,f=200MHz

Ic=1A, IB1=0.1A, IB2= -0.1A

220

0.4

0.5

2.5

ton

tstg

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-011,A

12 3

中文翻译

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