Datasheet > 2SD2133Q

2SD2133Q

更新时间： 2024-09-23 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	69K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-221VAR

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中文翻译

获取价格

数据手册

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2SD2133Q 数据手册

Power Transistors

2SD2133

Silicon NPN epitaxial planar type

Unit: mm

7.5±±.ꢀ

4.5±±.ꢀ

For low-frequency power amplification driver

Complementary to 2SB1413

±.65±±.1

±.85±±.1

1.±±±.1

I Features

±.8 C

•

Low collector to emitter saturation voltage V_CE(sat)

Output of 15 W can be obtained by a complementary pair with

2SB1413

±.7±±.1

1.15±±.ꢀ

I Absolute Maximum Ratings T_C= 25°C

±.5±±.1

±.4±±.1

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

±.8 C

ꢀ

1: Base

2: Collector

3: Emitter

ꢀ.5±±.ꢀ

1.5

MT-3 (MT3 Type Package)

I_C

1.5

Collector power dissipation

Junction temperature

Storage temperature

P_C

°C

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Symbol

I_CBO

Conditions

Min

Typ

Max

Unit

µA

V_CB= 20 V, I_E= 0

0.1

V_CBO

V_CEO

V_EBO

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

I_E= 10 µA, I_C= 0

h_FE1

V_CE= 10 V, I_C= 500 mA

V_CE= 5 V, I_C= 1 A

V_CE= 10 V, I_C= 1 mA

I_C= 500 mA, I_B= 50 mA

340

h_FE2

h_FE3

100

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.2

0.85

200

0.4

1.2

V_CB= 10 V, I_E= −50 mA, f = 200 MHz

MHz

Collector output capacitance

C_ob

V_CB= 10 V, I_E= 0, f = 1 MHz

Note) : Rank classification

Rank

h_FE1

85 to 170

120 to 240 170 to 340

12 3 4

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与2SD2133Q相关器件

型号	品牌	获取价格	描述	数据表
2SD2133R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SD2133S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SD2134	PANASONIC	获取价格	Silicon PNP epitaxial planar type
2SD2134P	PANASONIC	获取价格	Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2134Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SD2134R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SD2134S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SD2135	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 1A I(C) \| TO-221VAR
2SD2136	PANASONIC	获取价格	Silicon PNP epitaxial planar type
2SD2136	UTC	获取价格	POWER TRANSISTOR