生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 560 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 350 MHz |
VCEsat-Max: | 0.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2132T93/VW | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SD2132V | ROHM |
获取价格 |
500mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | |
2SD2133 | PANASONIC |
获取价格 |
Silicon NPN epitaxial planar type | |
2SD2133Q | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-221VAR | |
2SD2133R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-221VAR | |
2SD2133S | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-221VAR | |
2SD2134 | PANASONIC |
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Silicon PNP epitaxial planar type | |
2SD2134P | PANASONIC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SD2134Q | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR | |
2SD2134R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR |