Datasheet > 2SD2136

2SD2136

更新时间： 2023-12-06 20:08:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	429K
描述
TO-126

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数据手册

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2SD2136 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

2SD2136 TRANSISTOR (NPN)

TO – 126

FEATURES

High Forward Current Transfer Ratio h_FEWhich has

1. EMITTER

2. COLLECTOR

3. BASE

Satisfactory Linearity.

Low Collector-Emitter Saturation Voltage V_CE(sat)

Allowing Supply with the Radial Taping

ꢀꢁꢂꢃꢄꢅꢆ

Equivalent Circuit

D2136,!ꢀ-ꢁꢂꢀꢃꢂo.ꢀꢃ

Solid dot= Green molding compound

device, if none, the normal device

//,ꢄode ꢀ

D2136

ꢀ

ORDERING INFORMATION

Part Number

Package

TO-126

Packing Method

Pack Quantity

2SD2136

Bulk

200pcs/Bag

60pcs/Tube

2SD2136-TU

Tube

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

1.25

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

100

℃/W

℃

-55~+150

www.jscj-elec.com

Rev. - 2.0

12 3 4

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