2SD2136

更新时间： 2024-11-11 21:55:43

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	82K
描述
Silicon PNP epitaxial planar type

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2SD2136 数据手册

Power Transistors

2SB1416

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SD2136

Unit: mm

7.5 0.2

4.5 0.2

■ Features

• High forward current transfer ratio h_FEwhich has satisfactory

linearity

0.65 0.1

0.85 0.1

1.0 0.1

0.8 C

• Low collector-emitter saturation voltage V_CE(sat)

• Allowing automatic insertion with radial taping

0.7 0.1

1.15 0.2

■ Absolute Maximum Ratings T_a= 25°C

0.5 0.1

0.4 ^0.1

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−60

0.8 C

−60

1: Emitter

2: Collector

3: Base

−5

2.5 0.2

Collector current

I_C

I_CP

P_C

T_j

−3

−5

MT-3-A1 Package

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

1.5

°C

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Base-emitter voltage

I_C= −30 mA, I_B= 0

−60

V_BE

V_CE= −4 V, I_C= −3 A

V_CE= −60 V, V_BE= 0

V_CE= −30 V, I_B= 0

V_EB= −5 V, I_C= 0

−1.8

−200

−300

−1

Collector-emitter cutoff current (E-B short) I_CES

µA



Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_CEO

I_EBO

h_FE1

h_FE2

V_CE= −4 V, I_C= −1 A

V_CE= −4 V, I_C= −3 A

250

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −3 A, I_B= − 0.375A

−1.2

MHz

µs

f_T

t_on

t_stg

t_f

V_CB= −5 V, I_E= 0.1 A, f = 200 MHz

I_C= −1 A, I_B1= − 0.1 A, I_B2= 0.1 A

270

0.5

1.2

0.3

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

40 to 90

70 to 150

120 to 250

Publication date: March 2003

SJD00071BED

12 3

中文翻译

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2SD2136 替代型号

型号	品牌	替代类型	描述	数据表
2SD2462	TOSHIBA	功能相似	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)
2SB1274	SANYO	功能相似	60V/3A Low-Frequency Power Amplifier Applications
BUX86P	NXP	功能相似	Silicon Diffused Power Transistor

与2SD2136相关器件

型号	品牌	获取价格	描述	数据表
2SD2136(TO-126C)	CJ	获取价格	Transistor
2SD2136_09	UTC	获取价格	POWER TRANSISTOR
2SD2136_11	UTC	获取价格	POWER TRANSISTOR
2SD2136_15	SECOS	获取价格	NPN Plastic Encapsulated Transistor
2SD2136_15	UTC	获取价格	POWER TRANSISTOR
2SD2136G-P-T6C-K	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD2136G-Q-T60-K	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD2136G-Q-T6C-K	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD2136G-Q-T6S-K	UTC	获取价格	Power Bipolar Transistor
2SD2136G-R-T6C-K	UTC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/

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