Datasheet > 2SD2131_06

2SD2131_06

更新时间： 2024-11-12 04:26:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	149K
描述
Silicon NPN Triple Diffused Type (Darlington)

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2SD2131_06 数据手册

2SD2131

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

2SD2131

High-Power Switching Applications

Unit: mm

Hammer Drive, Pulse Motor Drive Applications

•

High DC current gain: h

= 2000 (min) (V

= 3 V, I = 3 A)

CE C

Low saturation voltage: V

= 1.5 V (max) (I = 3 A)

CE (sat)

Zener diode included between collector and base.

Unclamped inductive load energy: E = 150 mJ (min)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

60 ± 10

Collector-emitter voltage

Emitter-base voltage

60 ± 10

Collector current

Base current

Pulse

0.5

JEDEC

JEITA

―

SC-67

2-10R1A

Ta = 25°C

Tc = 25°C

2.0

Collector power

dissipation

TOSHIBA

Weight: 1.7 g (typ.)

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Collector

Base

≈ 5 kΩ

≈ 150 Ω

Emitter

2006-11-21

12 3 4 5

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