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2SD2129 PDF预览

2SD2129

更新时间: 2024-11-12 07:31:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 38K
描述
Silicon NPN Power Transistors

2SD2129 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SD2129 数据手册

 浏览型号2SD2129的Datasheet PDF文件第2页浏览型号2SD2129的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD2129  
DESCRIPTION  
·With TO-220F package  
·DARLINGTON  
·High DC current gain  
·Low collector saturation voltage  
APPLICATIONS  
·High power switching applications  
·Hammer drive,pulse motor drive applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220F) and symbol  
3
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
100  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
100  
V
Open collector  
7
V
3
5
A
ICM  
Collector current-peak  
Base current  
A
IB  
0.5  
A
Ta=25  
TC=25℃  
2
PC  
Collector dissipation  
W
20  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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