生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | TO-220FM, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.46 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 6 A |
集电极-发射极最大电压: | 120 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 1000 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2106-E | RENESAS |
获取价格 |
6A, 120V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220FM, 3 PIN | |
2SD2107 | RENESAS |
获取价格 |
Silicon NPN Triple Diffused | |
2SD2107 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
2SD2107 | HITACHI |
获取价格 |
Silicon NPN Triple Diffused | |
2SD2107B | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-220FN | |
2SD2107C | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-220FN | |
2SD2108 | ISC |
获取价格 |
Silicon NPN Darlington Power Transistor | |
2SD2108 | HITACHI |
获取价格 |
SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER | |
2SD2109 | ETC |
获取价格 |
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2SD211 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors |