Datasheet > 2SD2114K_12

2SD2114K_12

更新时间： 2024-10-01 07:31:39

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	158K
描述
High-current Gain Medium Power Transistor

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中文翻译

获取价格

数据手册

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2SD2114K_12 数据手册

High-current Gain Medium Power Transistor (20V, 0.5A)

2SD2114K

Features

Dimensions (Unit : mm)

1) High DC current gain.

h^FE= 1200 (Typ.)

2) High emitter-base voltage.

VEBO =12V (Min.)

2SD2114K

2.9 0.2

+0.2

−0.1

1.1

1.9 0.2

0.8 0.1

0.95 0.95

(2)

(1)

0∼0.1

3) Low V^{CE (sat).}

V^{CE (sat)}= 0.18V (Typ.)

(I^C/ IB = 500mA / 20mA)

(3)

+0.1

0.15

+0.1

−0.06

0.4

−0.05

All terminals have same dimensions

(1) Emitter

(2) Base

(3) Collector

ROHM : SMT3

EIAJ : SC-59

Abbreviated symbol: BB

∗

Structure

Epitaxial planar type

NPN silicon transistor

Denotes hFE

∗

Absolute maximum ratings (Ta=25C)

Symbol

Limits

Unit

Parameter

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

0.5

A(DC)

A(Pulse)

Collector current

∗

Collector power dissipation

Junction temperature

0.2

150

°C

Tstg

−55 to +150

Storage temperature

Single pulse Pw=100ms

∗

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

BV^CBO

−

=10μA

=1mA

BVCEO

BVEBO

−

=10μA

CB=20V

EB=10V

CBO

−

0.5

0.4

2700

−

μA

Emitter cutoff current

EBO

−

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

VCE(sat)

−

0.18

−

CE=3V, I

CE=10V, I

CB=10V, I

=1mA, Vi=100mV(rms), f=1kHz

=500mA/20mA

=10mA

= −50mA, f=100MHz

=0A, f=1MHz

820

−

350

8.0

0.8

MHz

∗

Output capacitance

Cob

−

Output On-resistance

Ron

−

Measured using pulse current

∗

www.rohm.com

2012.01 - Rev.C

1/3

12 3 4

中文翻译

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