是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.61 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.5 A | 配置: | Single |
最小直流电流增益 (hFE): | 1200 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2115 | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planar | |
2SD2115 | HITACHI |
获取价格 |
Silicon NPN Epitaxial Planar(Low frequency power amplifier) | |
2SD2115(L) | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-251AA | |
2SD2115(L)-(1) | ETC |
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BJT | |
2SD2115(L)/(S) | HITACHI |
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Silicon NPN Epitaxial Planar(Low frequency power amplifier) | |
2SD2115(S) | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252AA | |
2SD2115(S)-(1) | ETC |
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BJT | |
2SD2115(S)TL | HITACHI |
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Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 | |
2SD2115(S)TR | RENESAS |
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暂无描述 | |
2SD2115(S)TR | HITACHI |
获取价格 |
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 |