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2SD2114KS PDF预览

2SD2114KS

更新时间: 2024-11-21 06:26:35
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
5页 86K
描述
High-current Gain Medium Power Transistor (20V, 0.5A)

2SD2114KS 数据手册

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2SD2114K / 2SD2144S  
Transistors  
High-current Gain Medium  
Power Transistor (20V, 0.5A)  
2SD2114K / 2SD2144S  
zExternal dimensions (Unit : mm)  
zFeatures  
2SD2114K  
1) High DC current gain.  
hFE = 1200 (Typ.)  
2.9 0.2  
+0.2  
1.1  
0.1  
1.9 0.2  
0.8 0.1  
0.95 0.95  
2) High emitter-base voltage.  
VEBO =12V (Min.)  
(2)  
(1)  
00.1  
3) Low VCE (sat).  
(3)  
+0.1  
VCE (sat) = 0.18V (Typ.)  
(IC / IB = 500mA / 20mA)  
0.15  
+0.1  
0.06  
0.4  
0.05  
All terminals have same dimensions  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : SMT3  
EIAJ : SC-59  
Abbreviated symbol: BB  
zStructure  
2SD2144S  
Epitaxial planar type  
NPN silicon transistor  
4
0.2  
2 0.2  
+
0.15  
0.45  
0.05  
+0.15  
0.45  
0.05  
+
0.4  
2.5  
0.5  
0.1  
5
(1) (2) (3)  
ROHM : SPT  
EIAJ : SC-72  
(1) Emitter  
(2) Collector  
(3) Base  
Denotes hFE  
zAbsolute maximum ratings (Ta=25°C)  
Symbol  
Limits  
Unit  
Parameter  
VCBO  
VCEO  
VEBO  
25  
V
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
20  
12  
V
0.5  
A(DC)  
A(Pulse)  
I
C
Collector current  
1
0.2  
2SD2114K  
Collector power  
dissipation  
P
C
W
2SD2144S  
0.3  
Tj  
150  
°C  
°C  
Junction temperature  
Tstg  
55 to +150  
Storage temperature  
Single pulse Pw=100ms  
Rev.B  
1/4  

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