Datasheet > 2SD2114_11

2SD2114_11

更新时间： 2024-11-21 07:31:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	253K
描述
NPN Plastic-Encapsulate Transistor

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数据手册

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2SD2114_11 数据手册

2SD2114

0.5A , 25V

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURE

ꢀ

High DC Current Gain.

High Emitter-Base Voltage. V_EBO=12V (Min.)

ꢀ

Top View

C B

CLASSIFICATION OF h_FE

Product-Rank

2SD2114-V

820~1800

BBV

2SD2114-W

Range

1200~2700

BBW

Marking

Millimeter

Min. Max.

PACKAGE INFORMATION

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

2.80

2.10

1.20

0.89

1.78

0.30

0.09

0.45

0.08

0.18

0.60

0.177

Package

MPQ

LeaderSize

7’ inch

0.6 REF.

SOT-23

0.89

1.02

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

500

°C

P_C

250

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

I_C=10µA, I_E=0

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1mA, I_B=0

0.5

2700

0.4

I_E=10µA, I_C=0

µA

V_CB=20V, I_E=0

V_EB=10V, I_C=0

V_CE=3V, I_C=10mA

I_C=500mA, I_B=20mA

Emitter Cut-Off Current

I_EBO

DC Current Gain

h_FE

820

Collector to Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

f_T

350

MHz V_CE=10V, I_C=50mA, f=100MHz

Collector Output Capacitance

On Resistance

C_ob

V_CB=10V, I_E=0, f=1MHz

R_(on)

0.8

Ω

V_in=0.1V(rms), I_B=1mA, f=1KH_z

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

24-Feb-2011 Rev. B

Page 1 of 3

12 3

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