Datasheet > 2SD2114K

2SD2114K

更新时间： 2024-11-21 06:22:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	36K
描述
Power Transistor

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中文翻译

获取价格

数据手册

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2SD2114K 数据手册

SMD Type

TransistIoCrs

Power Transistor

2SD2114K

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High DC current gain.

High emitter-base voltage.

Low VCE (sat).

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

Rating

Unit

V^CEO

V^EBO

0.5

Collector current

I^C

1 *

Collector power dissipation

Junction temperature

Storage temperature

P^C

0.2

150

Tstg

-55 to +150

* Single pulse Pw=100ms.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC=10ìA

BV^CEOIC=1mA

BV^EBOIE=10ìA

I^CBO

I^EBO

V^CE(sat)IC/IB=500mA/20mA

h^FEVCE=3V, IC=10mA

f^T

VCB=20V

0.5

ìA

Emitter cutoff current

VEB=10V

Collector-emitter saturation voltage

DC current transfer ratio

0.18

0.4

820

2700

Output capacitance *

VCE=10V, IE= -50mA, f=100MHz

VCB=10V, IE=0, f=1MHz

350

8.0

0.8

MHz

Transition frequency

C^ob

R^on

Output On-resistance

IB=1mA, Vi=100mV(rms), f=1kHz

* Measured using pulse current.

hFE Classification

Marking

Rank

h^FE

820 1800

1200 2700

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