Datasheet > 2SD211

2SD211

更新时间： 2024-11-18 06:17:47

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	109K
描述
Silicon NPN Power Transistors

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中文翻译

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2SD211 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD211

DESCRIPTION

·With TO-3 package

·Large current capability

·Wide area of safe operation

APPLICATIONS

·For power amplifier and switching

applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

100

150

-55~150

ꢀ

T_j

T_stg

ꢀ

12 3

中文翻译

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