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2SD2012(Q)

更新时间： 2024-09-15 12:59:19

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管功率双极晶体管
页数	文件大小	规格书
5页	127K
描述
TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB

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技术参数
数据手册

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2SD2012(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	Is Samacsys：	N
最大集电极电流 (IC)：	3 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	25 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SD2012(Q) 数据手册

2SD2012

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD2012

Audio Frequency Power Amplifier Applications

Unit: mm

•

Low saturation voltage: V

= 0.4 V (typ.) (I = 2A / I = 0.2A)

CE (sat)

High power dissipation: P = 25 W (Tc = 25°C)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

0.5

Base current

Ta = 25°C

Tc = 25°C

2.0

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

TOSHIBA

2-10R1A

Note 1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 1.7 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-01

12 3 4 5

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