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2SD2012FM

更新时间： 2024-09-15 11:47:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	127K
描述
Audio Frequency Power Amplifier Applications

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中文翻译

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数据手册

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2SD2012FM 数据手册

2SD2012

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD2012

Audio Frequency Power Amplifier Applications

Unit: mm

•

Low saturation voltage: V

= 0.4 V (typ.) (I = 2A / I = 0.2A)

CE (sat)

High power dissipation: P = 25 W (Tc = 25°C)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

0.5

Base current

Ta = 25°C

Tc = 25°C

2.0

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

TOSHIBA

2-10R1A

Note 1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 1.7 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-01

12 3 4 5

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