5秒后页面跳转
2SD2015_01 PDF预览

2SD2015_01

更新时间: 2024-09-15 07:31:39
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管
页数 文件大小 规格书
1页 30K
描述
Silicon NPN Triple Diffused Planar Transistor

2SD2015_01 数据手册

  
C
E
Equivalent  
circuit  
B
Darlington 2 S D2 0 1 5  
(3k)(500)  
Silicon NPN Triple Diffused Planar Transistor  
Application : Driver for Solenoid, Relay and Motor and General Purpose  
External Dimensions FM20(TO220F)  
Absolute maximum ratings (Ta=25°C)  
Electrical Characteristics  
(Ta=25°C)  
Ratings  
Symbol  
Conditions  
Ratings  
10max  
10max  
120min  
2000min  
1.5max  
2.0max  
40typ  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Unit  
µA  
mA  
V
Unit  
±0.2  
4.2  
±0.2  
10.1  
c
0.5  
2.8  
150  
ICBO  
VCB=150V  
V
120  
IEBO  
VEB=6V  
V
6
V(BR)CEO  
hFE  
IC=10mA  
V
±0.2  
ø3.3  
a
b
4
0.5  
VCE=2V, IC=2A  
IC=2A, IB=2mA  
IC=2A, IB=2mA  
VCE=12V, IE=0.1A  
VCB=10V, f=1MHz  
A
VCE(sat)  
VBE(sat)  
fT  
V
V
IB  
A
25(Tc=25°C)  
150  
PC  
W
°C  
°C  
MHz  
pF  
±0.15  
±0.15  
Tj  
1.35  
1.35  
–55 to +150  
COB  
40typ  
Tstg  
+0.2  
-0.1  
0.85  
+0.2  
-0.1  
0.45  
±0.2  
2.4  
2.54  
2.54  
Typical Switching Characteristics (Common Emitter)  
±0.2  
2.2  
Weight : Approx 2.0g  
a. Part No.  
b. Lot No.  
VCC  
(V)  
RL  
IC  
VBB1  
VBB2  
(V)  
IB1  
IB2  
ton  
tstg  
tf  
()  
(A)  
(V)  
(mA)  
(µs)  
(µs)  
(mA)  
(µs)  
B
C E  
40  
20  
2
10  
–5  
10  
–10  
0.6typ  
5.0typ  
2.0typ  
VCE(sat) IB Characteristics (Typical)  
IC VCE Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=4V)  
3
4
3
2
1
0
4
0.8mA  
0.6mA  
0.5mA  
3
2
1
0
2
0.4mA  
0.3mA  
3A  
1
2A  
1A  
0
0
1
2
3
4
5
6
0.2  
1
5
10  
50 100  
0
1
2
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=4V)  
(VCE=4V)  
5
20000  
20000  
Typ  
10000  
5000  
10000  
5000  
1000  
500  
1000  
500  
1
100  
50  
100  
50  
0.5  
1
5
10  
50 100  
Time t(ms)  
500 1000  
0.03  
0.1  
0.5  
1
4
0.03 0.05  
0.1  
0.5  
1
4
Collector Current IC(A)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=12V)  
30  
20  
10  
60  
50  
40  
10  
5
Natural Cooling  
Silicone Grease  
Heatsink: Aluminum  
in mm  
100ms  
Typ  
1
30  
20  
0.5  
150x150x2  
100x  
Without Heatsink  
Natural Cooling  
50x50x2  
0.1  
10  
0
Without Heatsink  
0.05  
0.03  
2
0
–0.02 –0.05 –0.1  
–0.5  
–1  
–4  
5
50  
100  
200  
10  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
Emitter Current IE(A)  
141  

与2SD2015_01相关器件

型号 品牌 获取价格 描述 数据表
2SD2016 SANKEN

获取价格

Silicon NPN Triple Diffused Planar Transistor(Igniter, Relay and General Purpose)
2SD2016 ISC

获取价格

Silicon NPN Darlington Power Transistor
2SD2016_01 SANKEN

获取价格

Silicon NPN Triple Diffused Planar Transistor
2SD2017 SANKEN

获取价格

Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and Gen
2SD2017 SAVANTIC

获取价格

Silicon NPN Power Transistors
2SD2017 ISC

获取价格

Silicon NPN Power Transistors
2SD2017_01 SANKEN

获取价格

Silicon NPN Triple Diffused Planar Transistor
2SD2018 PANASONIC

获取价格

Silicon NPN epitaxial planar type darlington
2SD2019 HITACHI

获取价格

Silicon NPN Epitaxial
2SD2019 RENESAS

获取价格

1.5A, 80V, NPN, Si, POWER TRANSISTOR, TO-126MOD, 3 PIN