生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.66 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1818-K-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
![]() |
2SD1818-L | NEC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
![]() |
2SD1818-L-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
![]() |
2SD1818-M-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
![]() |
2SD1819A | PANASONIC |
获取价格 |
Silicon NPN epitaxial planer type |
![]() |
2SD1819A | KEXIN |
获取价格 |
Silicon NPN Epitaxial Planar Type |
![]() |
2SD1819A | SECOS |
获取价格 |
NPN Silicon General Purpose Transistor |
![]() |
2SD1819A | TYSEMI |
获取价格 |
High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat |
![]() |
2SD1819A | CJ |
获取价格 |
SOT-323 |
![]() |
2SD1819A | BL Galaxy Electrical |
获取价格 |
50V,0.1A,General Purpose NPN Bipolar Transistor |
![]() |