Datasheet > 2SD1819A-S

2SD1819A-S

更新时间： 2024-01-17 19:26:43

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1819A-S 数据手册

SMD Type

Transistors

NPN Transistors

2SD1819A

■ Features

● Low Collector-to-Emitter Saturation Voltage

● High foward current transfer ratio h^FE

● Complementary to 2SB1218A

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

100

℃

200

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 2 mA， I = 0

= 100μA， I

E= 0

C= 0

ICBO

ICEO

EBO

CB= 50 V , I

^CE= 40 V , I

^EB= 6V , I

= 0

0.1

0.3

1.2

460

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=100mA, I

=10mA

0.1

=100mA, I

hFE(1)

CE= 10V, I

CE= 2V, I

= 2mA

160

DC current gain

hFE(2)

= 100 mA

Collector output capacitance

Transition frequency

Cob

CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

3.5

E= -2 mA,f=1MHz

150

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD1819A-Q

160-260

2SD1819A-R

2SD1819A-S

290-460

210-340

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