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2SD1819AQ PDF预览

2SD1819AQ

更新时间: 2024-02-13 20:07:33
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 49K
描述
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-236VAR

2SD1819AQ 数据手册

 浏览型号2SD1819AQ的Datasheet PDF文件第2页浏览型号2SD1819AQ的Datasheet PDF文件第3页 
Transistor  
2SD1819A  
Silicon NPN epitaxial planer type  
For general amplification  
Unit: mm  
Complementary to 2SB1218A  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High foward current transfer ratio hFE  
.
1
Low collector to emitter saturation voltage VCE(sat)  
.
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
3
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
60  
50  
V
7
V
1:Base  
200  
mA  
mA  
mW  
˚C  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
IC  
100  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Marking symbol : Z  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
0.1  
Unit  
µA  
µA  
V
VCB = 20V, IE = 0  
Collector cutoff current  
ICEO  
VCE = 10V, IB = 0  
100  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = 10µA, IE = 0  
60  
50  
7
IC = 2mA, IB = 0  
V
IE = 10µA, IC = 0  
V
*
hFE1  
VCE = 10V, IC = 2mA  
VCE = 2V, IC = 100mA  
IC = 100mA, IB = 10mA  
VCB = 10V, IE = –2mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
160  
90  
460  
0.3  
Forward current transfer ratio  
hFE2  
Collector to emitter saturation voltage VCE(sat)  
0.1  
150  
3.5  
V
MHz  
pF  
Transition frequency  
fT  
Collector output capacitance  
Cob  
*hFE1 Rank classification  
Rank  
hFE1  
Q
R
S
160 ~ 260  
ZQ  
210 ~ 340  
ZR  
290 ~ 460  
ZS  
Marking Symbol  
1

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