Datasheet > 2SD1819AR

2SD1819AR

更新时间： 2024-02-16 06:43:32

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	240K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SD1819AR 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Is Samacsys：	N	Base Number Matches：	1

2SD1819AR 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

2SD1819A TRANSISTOR (NPN)

FEATURES

SOT–323

 High DC Current Gain

 Complementary to 2SB1218A

 Low Collector to Emitter Saturation Voltage

APPLICATIONS

 General Purpose Amplification

1. BASE

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

2. EMITTER

3. COLLECTOR

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

150

P_C

R_ΘJA

T_j

833

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=10µA, I_E=0

V_(BR)CEOI_C=2mA, I_B=0

V_(BR)EBOI_E=10µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_CEO

I_EBO

V_CB=20V, I_E=0

V_CE=10V, I_B=0

V_EB=7V, I_C=0

0.1

100

0.1

µA

Collector cut-off current

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

f_T

V_CE=10V, I_C=2mA

160

460

DC current gain

V_CE=2V, I_C=0.1A

I_C=100mA, I_B=10mA

V_CE=10V,I_C=2mA , f=200MHz

V_CB=10V, I_E=0, f=1MHz

0.3

Collector-emitter saturation voltage

Transition frequency

150

3.5

MHz

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

RANK

210–340

RANGE

160–260

290–460

MARKING

A,Oct,2010

中文翻译

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