Datasheet > 2SD1819A

2SD1819A

更新时间： 2024-02-11 05:39:57

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描述
Silicon NPN Epitaxial Planar Type

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中文翻译

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数据手册

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2SD1819A 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial Planar Type

2SD1819A

Features

High foward current transfer ratio hFE.

Low collector to emitter saturation voltage VCE(sat).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CP

Rating

Unit

Peak collector current

Collector current

200

I^C

100

Collector power dissipation

Junction temperature

Storage temperature

P^C

150

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

VCB = 20V, IE = 0

Min

Typ

Max

0.1

Unit

ìA

Collector cutoff current

I^CEO

V^CBO

V^CEO

V^EBO

hFE

VCE = 10V, IB = 0

IC = 10ìA, IE = 0

IC = 2mA, IB = 0

100

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

IE = 10ìA, IC = 0

VCE = 10V, IC = 2mA

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

160

460

0.3

V^CE(sat)IC = 100mA, IB = 10mA

0.1

150

3.5

f^T

VCB = 10V, IE =-2mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

MHz

Collector output capacitance

C^ob

hFE Classification

Marking

Rank

h^FE

160 260

210 340

290 460

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