Datasheet > 2SD1819A_11

2SD1819A_11

更新时间： 2024-02-17 10:46:35

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	339K
描述
NPN Plastic-Encapsulate Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1819A_11 数据手册

2SD1819A

0.1A , 60V

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-323

FEATURES

ꢀ

High DC Current Gain.

Low collector to emitter saturation voltage V_CE(sat)

Complementary to 2SB1218A

Top View

C B

APPLICATION

ꢀ

General purpose amplification.

CLASSIFICATION OF h_FE

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

0.100 REF.

0.525 REF.

Product-Rank 2SD1819A-Q 2SD1819A-R 2SD1819A-S

1.80

1.15

0.80

1.20

0.20

2.20

2.45

1.35

1.10

1.40

0.40

Range

160~260

210~340

290~460

0.08

0.25

0.650 TYP.

Marking

Collector

PACKAGE INFORMATION

Package

MPQ

LeaderSize

7’ inch

SOT-323

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

100

Collector Current

°C / W

°C

Collector Power Dissipation

Thermal Resistance From Junction to Ambient

Junction & Storage temperature

P_C

150

R_θJA

833

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Symbol Min.

Typ.

Max.

Unit

Test Conditions

I_C=10µA, I_E=0

V_(BR)CBO

Collector-Emitter Breakdown Voltage V_(BR)CEO

I_C=2mA, I_B=0

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Base Cut-Off Current

V_(BR)EBO

I_CBO

I_E=10µA, I_C=0

0.1

100

0.1

460

µA

V_CB=20V, I_E=0

V_CE=10V, I_B=0

V_EB=7V, I_C=0

I_CEO

Emitter Cut-off Current

I_EBO

160

h_{FE (1)}

h_{FE (2)}

V_CE(sat)

f_T

V_CE=10V, I_C=2mA

V_CE=2V, I_C=100mA

I_C=100mA, I_B=10mA

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

0.3

150

3.5

MHz V_CE=10V, I_C=2mA, f=200MHz

C_ob

V_CB=10V, I_E=0, f=1MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

24-Feb-2011 Rev. B

Page 1 of 2

中文翻译

下载PDF

与2SD1819A_11相关器件

型号	品牌	获取价格	描述	数据表
2SD1819A_15	KEXIN	获取价格	NPN Transistors
2SD1819AH	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1819AQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| TO-236VAR
2SD1819A-Q	KEXIN	获取价格	NPN Transistors
2SD1819AR	CJ	获取价格	Transistor
2SD1819A-R	KEXIN	获取价格	NPN Transistors
2SD1819AS	CJ	获取价格	Transistor
2SD1819A-S	KEXIN	获取价格	NPN Transistors
2SD1819ATX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1819GQ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO