生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.21 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1818-L | NEC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
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2SD1818-L-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
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2SD1818-M-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
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2SD1819A | PANASONIC |
获取价格 |
Silicon NPN epitaxial planer type |
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2SD1819A | KEXIN |
获取价格 |
Silicon NPN Epitaxial Planar Type |
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2SD1819A | SECOS |
获取价格 |
NPN Silicon General Purpose Transistor |
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2SD1819A | TYSEMI |
获取价格 |
High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat |
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2SD1819A | CJ |
获取价格 |
SOT-323 |
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2SD1819A | BL Galaxy Electrical |
获取价格 |
50V,0.1A,General Purpose NPN Bipolar Transistor |
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2SD1819A | FOSHAN |
获取价格 |
SOT-323 |
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