是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Lifetime Buy | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.52 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 150 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1160-Y(2-7B1A) | TOSHIBA |
获取价格 |
TRANSISTOR 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Pur | |
2SD1161 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 | |
2SD1161P4 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 | |
2SD1161P5 | ETC |
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TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 | |
2SD1161P6 | ETC |
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TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 | |
2SD1162 | PANASONIC |
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NPN SILICON TRIPLE DIFFUSED DARLINGTON TRANSISTOR | |
2SD1162 | ISC |
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isc Silicon NPN Darlington Power Transistor | |
2SD1162(V443) | NEC |
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Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2SD1162L | ISC |
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Transistor | |
2SD1162M | ISC |
获取价格 |
Transistor |