Datasheet > 2SD0662R

2SD0662R

更新时间： 2024-11-24 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	66K
描述
TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 70MA I(C) \| SC-71

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数据手册

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2SD0662R 数据手册

Transistor

2SD0662, 2SD0662B (2SD662, 2SD662B)

Silicon NPN epitaxial planer type

For high breakdown voltage general amplification

Unit: mm

6.9 0.1

2.5 0.1

1.0

1.5

1.5 R0.9

Features

High collector to emitter voltage V_CEO

R0.9

High transition frequency f_T.

R0.7

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

0.85

Absolute Maximum Ratings (Ta=25˚C)

0.55 0.1

0.45 0.05

Parameter

Collector to

2SD0662

Symbol

Ratings

250

Unit

V_CBO

2SD0662B

2SD0662

base voltage

Collector to

400

2.5

200

V_CEO

emitter voltage 2SD0662B

Emitter to base voltage

Peak collector current

Collector current

400

1:Base

V_EBO

I_CP

I_C

˚C

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

100

Collector power dissipation

Junction temperature

Storage temperature

P_C

600

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CEO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CE= 100V, I_B= 0

µA

Collector to emitter 2SD0662

200

400

V_CEO

V_EBO

I_C= 100µA, I_B= 0

I_E= 10µA, I_C= 0

voltage

2SD0662B

Emitter to base voltage

Forward current

transfer ratio

2SD0662

220

150

1.2

h_FE

V_CE= 10V, I_C= 5mA

2SD0662B

Collector to emitter saturation voltage V_CE(sat)

I_C= 50mA, I_B= 5mA

MHz

Transition frequency

f_T

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

Collector output capacitance

C_ob

^*h_FERank classification

Rank

h_FE

30 ~ 100

60 ~ 150

100 ~ 220

Note.) The Part numbers in the Parenthesis show conventional part number.

12 3

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