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2SD0814AR PDF预览

2SD0814AR

更新时间: 2024-11-25 20:20:59
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 170K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 185V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN

2SD0814AR 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.8
其他特性:LOW NOISE最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:185 V配置:SINGLE
最小直流电流增益 (hFE):130JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2SD0814AR 数据手册

 浏览型号2SD0814AR的Datasheet PDF文件第2页浏览型号2SD0814AR的Datasheet PDF文件第3页 
Transistor  
2SD0814, 2SD0814A (2SD814, 2SD814A)  
Silicon NPN epitaxial planer type  
For high breakdown voltage low-frequency and low-noise  
Unit: mm  
amplification  
+0.10  
0.40  
ñ0.05  
+0.10  
-0.06  
Features  
High collector to emitter voltage VCEO  
Low noise voltage NV.  
0.16  
3
.
Mini type package, allowing downsizing of the equipmnt and  
automatic insertion through the tape packing and the magazine  
packing.  
()  
1.9±0.1  
+0.20  
2.90  
-0.05  
Absolute Maximum Ratings (Ta=25˚C)  
10°  
Parameter  
Symbol  
atin
15
Unit  
Collector to  
2SD0814  
2SD0814A  
2SD081
V
V
base voltage  
Collector to  
185  
150  
VO  
V
emitter voltage 2SD0814A  
Emitter to base voltge  
Peak collector curre
Collector current  
185  
VEO  
ICP  
IC  
5
V
mA  
mA  
mW  
˚C  
1:Bae  
2:Emitter  
3:Collector  
EIAJ:SC–59  
Mini3-G1 Package  
10
0  
(2SD0814)  
(2SD0814A)  
Marking symbol : P  
Collectpowssipation  
Junion teure  
Stoage emperature  
PC  
0  
L
T
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector c
VCB = 100V, IE = 0  
1
µA  
Collector to em2SD0814  
150  
185  
5
VCEO  
IC = 100µA, IB = 0  
V
V
voltage  
2SD0814A  
Emitter to base voltage  
VEBO  
IE = 10µA, IC = 0  
*
Forward current transfer ratio  
hFE  
VCE = 5V, IC = 10mA  
90  
330  
1
Collector to emitter saturation voltage VCE(sat)  
IC = 30mA, IB = 3mA  
V
MHz  
pF  
Transition frequency  
fT  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
VCE = 10V, IC = 1mA, GV = 80dB  
Rg = 100k, Function = FLAT  
150  
Collector output capacitance  
Cob  
2.3  
Noise voltage  
NV  
150  
mV  
*hFE Rank classification  
Rank  
hFE  
Q
R
S
90 ~ 155  
PQ  
130 ~ 220  
PR  
185 ~ 330  
PS  
2SD0814  
Marking  
Symbol  
Note.) The Part numbers in the Parenthesis show  
conventional part number.  
2SD0814A  
LQ  
LR  
LS  
556  

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