2SD0875GS

更新时间： 2024-11-18 13:04:19

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	72K
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2SD0875GS 数据手册

Transistors

2SD0875 (2SD875)

Silicon NPN epitaxial planar type

For low-frequency power amplification

Complementary to 2SB0767 (2SB767)

Unit: mm

4.5 0.1

1.6 0.2

1.5 0.1

■ Features

• Large collector power dissipation P_C

• High collector-emitter voltage (Base open) V_CEO

• Mini power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the magazine

packing.

0.4 0.08

1.5 ^0.1

0.5 0.08

0.4 0.04

3˚

■ Absolute Maximum Ratings T_a= 25°C

45˚

3.0 0.15

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

1: Base

2: Collector

3: Emitter

MiniP3-F1 Package

0.5

Marking Symbol: X

Peak collector current

I_CP

Collector power dissipation ^*

Junction temperature

P_C

°C

T_j

150

Storage temperature

T_stg

−55 to +150

Note) : Printed circuit board: Copper foil area of 1 cm²or more, and the

board thickness of 1.7 mm for the collector portion

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

I_C= 10 µA, I_E= 0

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

I_C= 100 µA, I_B= 0

I_E= 10 µA, I_C= 0

V_CB= 20 V, I_E= 0

0.1

µA



h_FE1

V_CE= 10 V, I_C= 150 mA

V_CE= 50 V, I_C= 500 mA

130

330

h_FE2

100

0.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= 300 mA, I_B= 30 mA

V_BE(sat)I_C= 300 mA, I_B= 30 mA

0.4

1.2

0.85

120

f_T

V_CB= 10 V, I_E= −50 mA, f = 200 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

130 to 220

185 to 330

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002

SJC00198CED

12 3

中文翻译

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与2SD0875GS相关器件

型号	品牌	获取价格	描述	数据表
2SD0875R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| TO-243
2SD0875S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| TO-243
2SD0946	PANASONIC	获取价格	For Low-Frequency Amplification
2SD0946(2SD946)	ETC	获取价格	パワーデバイス－パワートランジスタ－その他
2SD0946\|2SD946	ETC	获取价格	Power Device - Power Transistors - Others
2SD0946A	PANASONIC	获取价格	For Low-Frequency Amplification
2SD0946A(2SD946A)	ETC	获取价格	Power Device - Power Transistors - Others
2SD0946A\|2SD946A	ETC	获取价格	Power Device - Power Transistors - Others
2SD0946AQ	PANASONIC	获取价格	Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD0946AR	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-126

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