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2SD0874Q PDF预览

2SD0874Q

更新时间: 2024-11-20 23:20:23
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描述
BJT

2SD0874Q 数据手册

 浏览型号2SD0874Q的Datasheet PDF文件第2页浏览型号2SD0874Q的Datasheet PDF文件第3页 
Transistor  
2SD0874, 2SD0874A (2SD874, 2SD874A)  
Silicon NPN epitaxial planer type  
For low-frequency power amplification  
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)  
Unit: mm  
Features  
I
G
Large collector power dissipation PC.  
Low collector to emitter saturation voltage VCE(sat)  
1.5 0.1  
4.5 0.1  
1.6 0.2  
G
.
G
Mini Power type package, allowing downsizing of the equipment  
and automatic insertion through the tape packing and the maga-  
zine packing.  
45°  
Absolute Maximum Ratings (Ta=25˚C)  
I
0.4 0.08  
0.4 0.04  
Parameter  
Symbol  
Ratings  
Unit  
0.5 0.08  
1.5 0.1  
Collector to  
2SD0874  
2SD0874A  
2SD0874  
30  
3.0 0.15  
2
VCBO  
V
base voltage  
Collector to  
60  
3
1
25  
VCEO  
V
emitter voltage 2SD0874A  
Emitter to base voltage  
Peak collector current  
Collector current  
50  
marking  
VEBO  
ICP  
5
V
A
1.5  
IC  
1
A
1:Base  
2:Collector  
3:Emitter  
EIAJ:SC–62  
Mini Power Type Package  
*
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
Tj  
150  
(2SD0874)  
Marking symbol : Z  
Tstg  
–55 ~ +150  
(2SD0874A)  
Y
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
*
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
ICBO  
Conditions  
VCB = 20V, IE = 0  
min  
typ  
max  
Unit  
Collector cutoff current  
0.1  
µA  
Collector to base  
voltage  
2SD0874  
2SD0874A  
30  
60  
25  
50  
5
VCBO  
IC = 10µA, IE = 0  
V
Collector to emitter 2SD0874  
VCEO  
VEBO  
IC = 2mA, IB = 0  
V
V
voltage  
2SD0874A  
Emitter to base voltage  
IE = 10µA, IC = 0  
*1  
hFE1  
hFE2  
VCE = 10V, IC = 500mA*2  
85  
50  
160  
340  
Forward current transfer ratio  
VCE = 5V, IC = 1A*2  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 500mA, IB = 50mA*2  
IC = 500mA, IB = 50mA*2  
VCB = 10V, IE = –50mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
0.2  
0.85  
200  
0.4  
1.2  
V
V
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
20  
*2 Pulse measurement  
*1  
h
FE1  
Rank classification  
Rank  
hFE1  
Q
R
S
85 ~ 170  
ZQ  
120 ~ 240  
ZR  
170 ~ 340  
ZS  
2SD0874  
Marking  
Symbol  
Note.) The Part numbers in the Parenthesis show  
conventional part number.  
2SD0874A  
YQ  
YR  
YS  
1

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