2SC5336

更新时间： 2024-10-29 22:52:47

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
6页	51K
描述
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

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中文翻译

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数据手册

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2SC5336 数据手册

PRELIMINARY DATA SHEET

Silicon Transistor

2SC5336

NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY LOW DISTORTION AMPLIFIER

FEATURES

PACKAGE DIMENSIONS

•

High gain

| S₂₁

²= 12 dB TYP, @f = 1 GHz, V_CE= 10 V, Ic = 20 mA

(in millimeters)

4.5±0.1

•

New power mini-mold package version of a 4-pin type

gain-improved on the 2SC3357

1.6±0.2

1.5±0.1

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

0.42

±0.06

0.42

±0.06

3.0

0.25±0.02

100

1.5

3.0

0.46

±0.06

Note1

Total Power Dissipation

Junction Temperature

Storage Temperature

P_T

1.2

T_j

150

°C

T_stg

–65 to +150

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

Note 1

. 0.7 mm 16 cm double sided ceramic substrate (Copper plating)

ELECTRICAL CHARACTERISTICS (T_A= 25 °C)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

I_CB0

I_EB0

h_FE

Test Conditions

V_CB= 10 V, I_E= 0

MIN.

TYP.

MAX.

1.0

Unit

µA

V_EB= 1 V, I_C= 0

1.0

µA

V_CE= 10 V, I_C= 20 mA^Note2

120

6.5

250

Gain Bandwidth Product

Feed-back Capacitance

Insertion Power Gain

Noise Figure

f_T

V_CE= 10 V, I_C= 20 mA

GHz

C_re

V_CB= 10 V, I_E= 0, f = 1.0 MHz^Note3

V_CE= 10 V, I_C= 20 mA, f = 1.0 GHz

V_CE= 10 V, I_C= 7 mA, f = 1.0 GHz

V_CE= 10 V, I_C= 40 mA, f = 1.0 GHz

0.5

0.8

| S_21e

12.0

1.1

Noise Figure

1.8

3.0

Notes 2

≤

. Pulse measurement : PW 350 S, Duty Cycle 2 %

. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.

h_FEClassification

Rank

Marking

h_FE

50 to 100

80 to 160

125 to

250

Document No. P10938EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

1996

12 3 4 5 6

中文翻译

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与2SC5336相关器件

型号	品牌	获取价格	描述	数据表
2SC5336(NE856M02)	ETC	获取价格	Discrete
2SC5336-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-A	RENESAS	获取价格	RF & Microwave device
2SC5336RE	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| TO-243
2SC5336-RE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-RE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336RE-T1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-243
2SC5336RF	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| TO-243
2SC5336-RF	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5336-RF	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4