Datasheet > 2SC5289(NE69039)

2SC5289(NE69039)

更新时间： 2024-09-12 23:20:23

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
12页	105K
描述
Discrete

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数据手册

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2SC5289(NE69039) 数据手册

DATA SHEET

SILICON TRANSISTOR

NE69039

NPN SILICON EPITAXIAL TRANSISTOR

FOR L-BAND LOW-POWER AMPLIFIER

The NE69039 is ideal for the final stage amplifier in 1.9G Hz-band digital

cordless phones (DECT, PHS, etc.).

PACKAGE DRAWING

(Unit: mm)

+0.2

–0.3

+0.2

–0.1

2.8

1.5

FEATURES

•

P–1 = 27 dBm TYP.

@f = 1.9 GHz, V^CC= 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8

4-Pin Mini Mold Package

•

EIAJ: SC-61

ORDERING INFORMATION

Part Number

Quantity

Packing Style

5°

NE69039-T1

3 Kpcs/Reel Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face

to perforation side of the tape.

Remark If you require an evaluation sample, please contact an NEC Sales

Representative. (Unit sample quantity is 50 pcs.)

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Parameter

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

9.0

6.0

2.0

300

Total Power Dissipation

200 (CW)

1.2 (duty = 1/8)

Note

3.0 (duty = 1/24)

150

Junction Temperature

Storage Temperature

˚C

Tstg

–65 to +150

Note Pulse period is 10 msec or less.

Document No. P11053EJ1V0DS00 (1st edition)

Date Published December 1995 P

Printed in Japan

1995

12 3 4 5 6 7...12

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