2SC5295JQ

更新时间： 2024-09-15 13:04:19

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松下 - PANASONIC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
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中文翻译

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数据手册

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2SC5295JQ 数据手册

Transistors

2SC5295

Silicon NPN epitaxial planer type

Unit: mm

For 2 GHz band low-noise amplification

+±.1

±.2

±.1ꢀ

–±.±ꢀ

I Features

• High transition frequency f_T

• Low collector output capacitance C_ob

• SS-mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing.

(±.ꢀ) (±.ꢀ)

1.±±±.1

1.6±±.1

ꢀ°

I Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1: Base

2: Emitter

3: Collector

EIAJ: SC-75

°C

SS-Mini Type Package (3-pin)

Collector power dissipation

Junction temperature

Storage temperature

P_C

125

Marking Symbol: 3S

T_j

125

T_stg

−55 to +125

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio ^*

Transition frequency

Collector output capacitance

Forward transfer gain

Power gain

Symbol

I_CBO

I_EBO

h_FE

Conditions

Min

Typ

Max

Unit

µA

V_CB= 10 V, I_E= 0

V_EB= 1 V, I_C= 0

µA

V_CE= 8 V, I_C= 20 mA

300

f_T

V_CE= 8 V, I_C= 15 mA, f = 1.5 GHz

V_CB= 10 V, I_E= 0, f = 1 MHz

V_CE= 8 V, I_C= 15 mA, f = 1.5 GHz

V_CE= 8 V, I_C= 7 mA, f = 1.5 GHz

7.0

8.5

0.6

GHz

C_ob

1.0

3.0

| S_21e

GUM

2.2

Noise figure

Note) *: Rank classification

Rank

h_FE

50 to 120

100 to 170

150 to 300

中文翻译

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